Real-Time Comprehensive Condition Monitoring Technique for SiC MOSFET-Based Inverters in EV Applications

Reliable performance in various system operating modes is a substantial requirement in the new power electronics systems and applications. Wide Bandgap-based devices are favorable and appropriate choices for the new EV applications, specially inverter circuits which demands low loss and low parasitic performance in high voltage switching operation. A comprehensive condition monitoring system can have a major contribution in enhancing system reliability and solve the problem of reliability by observing the deterministic parameters in system failure and maintenance. In this paper, a comprehensive condition monitoring technique with a special focus on two major failure mechanisms of SiC MOSFETs is proposed. The results of evaluation tests show that broadening the condition monitoring vision into package-related as well as chip-related domains leads to having a more realistic and accurate monitoring data of the health of the switch during operation.