Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs

M. H. Lee,Y.-Y. Lin,Y.-J. Yang,F.-C. Hsieh,S. T. Chang,M.-H. Liao,K.-S. Li,C. W. Liu,K.-T. Chen,C.-Y. Liao,G.-Y. Siang,C. Lo,H.-Y. Chen,Y.-J. Tseng, C.-Y. Chueh,C. Chang

international electron devices meeting（2019）

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摘要

Being the first demonstration of quasi-antiferroelertic Hf 1-x Zr x O 2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SS for =51mV/dec, SS rev =53mV/dec, ΔV T FE overlap of negative dQ/dV FE for forward and reverse, indicating non-hysteretic QAFE-HZO.

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关键词

negative capacitance,onset voltage,bi-directional,hysteresis-free,ferroelectric-antiferroelectric

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