High single-mode selectivity V-cavity tunable semiconductor laser based on GaAs
RESULTS IN PHYSICS(2024)
摘要
With the progress of integrated optoelectronic devices over recent decades, the semiconductor research has increasingly focused on tunable semiconductor lasers featuring a compact structure and simplified fabrication. In this manuscript, we present a proposal for a V-Cavity tunable semiconductor Laser (VCL) at a center wavelength of 940 nm. The theoretical analysis encompasses the threshold conditions of the laser, considering various cavity length differences within the waveguide layer structure. Moreover, we showcase a VCL with a waveguide width of 3 mu m and a channel interval of 0.6 nm. Through the optimization of polynomial parameters associated with the curved waveguide, the VCL attains a transmittance exceeding 99.4 %. Additionally, we address the determination of optimal parameter ranges and solve the optical field distribution within the half-wave coupler. The simulation results exhibit that the half-wave coupler, employing optimized parameters, achieves remarkable single-mode selectivity when operating at a central wavelength of 940 nm. Notably, a maximum side mode suppression ratio (SMSR) of 47.9 dB is attainable with a half-wave coupler length of 45 mu m and a waveguide gap of 1.7 mu m.
更多查看译文
关键词
GaAs,V-cavity,Semiconductor laser,Half-wave coupler
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要