Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag + Ions

FP9120 diazoquinone–novolac positive photoresist films 1.5 µm thick implanted with Ag + ions and supported on the surface of KDB-10 (111) silicon wafers by centrifugation have been studied by measuring reflection spectra. It has been shown that ion implantation leads to a decrease in the refractive index of the photoresist due to radiation crosslinking of novolac resin molecules and a decrease in the density ρ and the molecular refraction R M of the photoresist. It has been established that the reflection coefficient in the opaque region of the photoresistive film increases with the Ag + implantation dose. The changes observed in the optical properties of the films under ion implantation conditions are explained taking into account radiation-chemical processes in the phenol–formaldehyde photoresist.