Exploration of new Self-limiting Atomic Layer Etching Methods for Molybdenum

In recent years, molybdenum (Mo) is used more and more in the semiconductor industry as a low-resistivity metal material. The Physical Vapor Deposition (PVD) process is commonly used to obtain molybdenum thin films. The exploration of molybdenum thin films’ etching method will allow more flexibility in its applications. At present, the etching technology commonly used in industry is mainly atomic layer etching. Atomic layer etching is an advanced technique that can precisely control the amount of material etched. The key to achieving this technique is to divide the etching process into two steps: modification and removal. In this paper, a self-limiting molybdenum etching method based on oxidative and denature-wet removal combined treatment is obtained by comparing 7 schemes.