Comprehensive Physics Based TCAD Model for 2D MX2 Channel Transistors

D. Mahaveer Sathaiya,Terry Y.T. Hung,Edward Chen, Wen-Chia Wu, Aslan Wei,Chih-Piao Chuu,Sheng-Kai Su,Ang Sheng Chou, Cheng-Ting Chung,Chao-Hsin Chien,Han Wang,Jin Cai,Chung-Cheng Wu,Iuliana P. Radu,Jeff Wu

2022 International Electron Devices Meeting (IEDM)（2022）

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摘要

For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (R c ), channel mobility (μ CH ), Schottky barrier height (SBH), & D it from experimental data on back-gate (BG) transistors with MX 2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of R c and μ CH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH ~ 0eV, high doping density >2e13cm ^-2 ) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.

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关键词

2D material channel,2D MX2 channel transistors,back-gate transistors,channel mobility,contact metal,contact requirements,contact resistance,high doping density,scaled transistors,Schottky barrier height,TCAD model

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