Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs

G. Hu,M. G. Gottwald,Q. He,J. H. Park, G. Lauer,J. J. Nowak,S. L. Brown,B. Doris,D. Edelstein, E. R. Evarts,P. Hashemi,B. Khan,Y. H. Kim,C. Kothandaraman,N. Marchack, E. J. O'Sullivan,M. Reuter, R. P. Robertazzi,J. Z. Sun, T. Suwannasiri,P. L. Trouilloud,Y. Zhu,D. C. Worledge

2017 IEEE International Electron Devices Meeting (IEDM)（2017）

Cited 12|Views14

No score

Abstract

We report the impact of four key parameters on switching efficiency of STT-MRAM devices with perpendicular magnetic anisotropy: device size, device resistance-area product (RA), blanket film Gilbert damping constant (a), and process temperature. Performance degradation observed in 400°C-processed devices was eliminated by optimizing the perpendicular magnetic tunnel junction (p-MTJ) materials. Furthermore, 400°C-compatible double MTJs were developed for the first time and showed 1.5x improvement in switching efficiency compared to single MTJs with identical free layers.

Translated text

Key words

free layer identification,magnetic tunnel junction,blanket film Gilbert damping constant,RA,compatible p-MTJ,compatible double MTJ,perpendicular magnetic tunnel junction materials,device resistance-area product,perpendicular magnetic anisotropy,STT-MRAM devices,STT-MRAM switching efficiency,temperature 400.0 degC

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined