Modifying Crystal Symmetries via Shear Distortion

Strain is a powerful tool for studying how electric and magnetic phenomena arise from crystal symmetries and creating flexible (no pun intended) solid-state devices for a wide range of practical applications, including efficient spin-based memory storage and tunable quantum dots. The ability to finely tune symmetries within crystal lattices means a large degree of control over the optical transitions of the lattice, magnetic ordering, and spin domain population. While many methods for applying lateral strain and pressure have been well documented, the ability to reliably apply small-scale shear strain in physics research applications is uncommon. The goal for this project is to fill that vacuum by building and benchmarking a device which applies precise shear strain to a single crystal and interfaces directly with Quantum Design's PPMS (Physical Property Measurement System). For the first experiment run in this cell, an investigation of the strain-switchable antifer-romagnetic ordering of FeTe has been selected. This material displays a spontaneous monoclinic structural distortion as it enters a double-stripe antiferromagnetic phase, which may couple to applied shear strain and serve as both proof of concept of our device and an interesting investigation into the Eg elastoresistivity of FeTe in its own right. This poster discusses design considerations, construction details, and anticipated and preliminary measurements of FeTe.