Investigation of astrocytes' morphological changes in response to laser-induced shockwave

Traumatic Brain Injury (TBI) arises from an external force affecting the brain, leading to a range of outcomes from mild to severe. Despite continuous scientific advancements, it continues to pose a persistent threat and remains a significant cause of physical impairment and mortality. Various models, including blast-induced TBI (bTBI), have been proposed to simulate TBI. Laser-induced shockwaves (LIS) us emerging as an effective method. LIS generates shockwaves via pulsed laser-induced plasma formation, offering a controlled means to study TBI at the cellular level. Astrocytes, pivotal in maintaining brain function post-injury, undergo dynamic morphological changes, contributing to the understanding of injury responses and neurodegenerative diseases. This study introduces a system combining Laser-Induced Shockwaves (LIS) and Quantitative Phase Microscopy (QPM) to quantify morphological changes in astrocytes during and after LIS exposure. QPM, a label-free method, facilitates 3D imaging and captures real-time cellular dynamics. The integration of LIS and QPM enables the assessment of astrocyte responses to shear stress caused by LIS, revealing immediate and sustained morphological transformations. Analysis post-LIS exposure indicates significant alterations in circularity, volume, surface area, and other features. Statistical tests affirm of observed trends, providing insights into astrocyte responses to mechanical forces. The findings contribute to understanding how mechanical stimuli impact astrocyte morphology, holding promise for targeted therapeutic strategies in traumatic brain injuries and related neurological disorders. The integrated LIS and QPM approach serves as a powerful tool for 3D imaging and quantitative measurement of astrocyte morphological changes, offering deeper insights into cellular dynamics and potential therapeutic interventions. ### Competing Interest Statement The authors have declared no competing interest.