Indium and nitrogen K-edge X-ray absorption spectroscopy of InxGai-xN

Xianya Li, Chieh Miao Chang, Chih-Han Hsueh,Zyh-Fu Lee,Jin-Ming Chen,Hao-Hsiung Lin,Xinqiang Wang,Nikolaus Dietz,Guan Yong-jing,Zhe Chuan Feng

2016 5th International Symposium on Next-Generation Electronics (ISNE)（2016）

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摘要

InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). Samples are studied by X-ray absorption fine structure (XAFS) and X-ray absorption near-edge structure (XANES), respectively. They are all obtained with smooth data. Based on JFEFF calculation program, the Nitrogen K-edge X-Ray absorption energy is about 400eV, which matches with the measurement data.

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关键词

InGaN,XAFS,XANES

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