Impact of Interface Traps Generation on Flicker Noise Degradation in SI pMOSFETs

In this study, we examined the impact of interface states to the low frequency in Si pMOSFETs by applying a negative bias temperature instability (NBTI) stress. The subthreshold swing (S factor) degradation, the effective carrier mobility ($\mu_{eff}$) and the normalized drain current noise power spectral density ($S_{Id}$ 1/f) under different NBTI stress voltage ($V_{S}$) were characterized in devices. It is found that the $S_{Id}/Id^{2}$ increase with the stress voltage increases, due to the variation of interface trap density ($D_{it}$) increase.