Impact of Interface Trap Density on the Endurance of HFO2/SI FEFETS

The endurance of $\mathrm{H}\mathrm{f}\mathrm{O}_{2}/\mathrm{S}\mathrm{i}$ FeFETs are analyzed from the view point of MOS interface quality. It is found that endurance degradation in the FeFETs is strongly correlated with interface trap density $(D_{\mathrm{i}\mathrm{t}})$ at MOS interface, suggesting that the MOS interface passivation is mandatory for improving the performance of FeFETs.