55.4 GHz Bulk Acoustic Resonator in Thin-Film Scandium Aluminum Nitride
2023 IEEE International Ultrasonics Symposium (IUS)(2023)
摘要
This study describes a sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonator (FBAR) at 55.4 GHz. The resonator leverages the third-order symmetric (S3) mode in 37 nm Al on 85 nm Sc
0.3
Al
0.7
N on a 37 nm Al film stack, enabled by a new fabrication procedure. The 55.4 GHz S3 tone achieves electromechanical coupling (k
2
) of 3.8% and a 3-dB quality factor (Q) of 30, surpassing the reported state-of-the-art figure of merits (FoM, k
2
∙Q). Besides, the first-order symmetric (S1) mode at 21.0 GHz achieves k
2
of 6.4% and Q of 62. Upon further optimization of the sputtering procedure, ScAlN/AlN-based mmWave acoustic resonators will continue to be improved.
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关键词
acoustic resonators,piezoelectric devices,scandium aluminum nitride (ScAlN),millimeter-wave devices,thin-film bulk acoustic resonator (FBAR),thin-film devices
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