The Study of InP-Based Resonant Tunneling Diode

A resonant tunneling diode (RTD) based on Indium Phosphide (InP) with good characteristics has a potential for terahertz (THz) oscillator and detector applications. This device with a junction area of 38.5 μm ² shows excellent DC characteristics, including the valley current density(J v ) is 59.7 kA/cm ² , the peak current density (J p ) is 298.7 kA/cm ² , and the peak-to-valley current ratio (PVCR) is 5. According to the DC measurement, the theoretically maximum RF output power (P max ) is 2.4 mW and theoretically calculated oscillation frequency (f max ) is 2.26 THz. Oscillator circuits with high RF power can be realized by large micro-sized RTD devices and air-bridge interconnection technology is used for reducing device capacitance. This device has a great potential for terahertz oscillator and detector applications.