Low frequency noise characteristics in p-Type MOSFET with multilayer WSe2 channel and Al2O3 back gate dielectric

Transition metal dichalcogenide (TMDC) has recently attracted great attention for microelectronics and other applications. In this paper, we present the low frequency noise spectra in one of the typical TMDC, i.e., the WSe2 channel p-type MOSFET with back-gated Al ₂ O ₃ dielectric. We observed that the noise power spectra all show 1/f ^α characteristic with α near 1. The analysis on the spectra in linear and saturation regions as a function of drain current demonstrates that the carrier number fluctuation is the dominant mechanism responsible to the noise. The correlated mobility fluctuation has a minor contribution in order to quantitatively account for the experimental observations. We also observed a correlated asymmetric effect of source and drain in both IV and noise spectra, showing that the Schottky contact may have contribution to the noise. This presentation provides new evidence that the noise spectra are a very powerful tool in the characterization of emerging semiconductor MOSFETs.