Demonstration of PtMn-based Field-free Switching SOT MRAM

In the group of Mn-based antiferromagnetic materials, PtMn shows high enough thermal stability to fit the requirement of high temperature in BEOL. We worked on a field-free switching device with the application of PtMn, which can be integrated into perpendicular MRAM stacks and processes of BEOL. With help from ferromagnetic coupling from SAF which is pinned by PtMn, we can get field-free switching, which can further increase the pillar size compared with traditional stray-field MRAM.