650V 4H-SiC VDMOSFET with Additional n Region: A Simulation Study

A novel 4H-SiC VDMOSFET with additional n region(NA-VDMOSFET) is proposed and investigated by TCAD simulation in this paper. The NA-VDMOSFET exhibits $0.96\mathrm{m}\Omega\cdot \text{cm}^{2}$ lower specific resistance (Ron, sp) and 0.2V higher threshold voltage (V th ) than the conventional VDMOSFET(C-VDMOSFET) with forward blocking voltage (V DSS ) and the maximum electric field in gate oxide (E OX, Max ) satisfy the design value. Meanwhile, the total losss (E total ) reduced lightly compared with C-VDMOSFET. The overall similar performance makes NA-VDMOSFET an excellent choice for manufacture of uniform channel length. It shows the doping profile and dimension of NA and thichness of SiO 2 for NA implantation.