Short Circuit Type II and III Behavior of 1.2 kV Power SiC-MOSFETs

The application relevant short circuit (SC) behavior of 1.2 kV power SiC-MOSFETs during the forward conduction mode (type II) and the body-diode conduction (type III) is experimentally investigated in this paper. Compared with Si-IGBTs, the SC type II and III behavior are less critical from the perspective of short-circuit energy. The reason is due to the smaller ratio between the Miller-capacitance and gate-source capacitance and further the more significant short-channel effect or Drain Induced Barrier Lowering (DIBL) effect for SiC-MOSFETs. Moreover, the influence of the operation temperature and gate trapping effect on the SC behavior are discussed.