Flexible Forming Free Resistive Memory Device with 2D Material $\text{MoSe}_{2}$ as Switching Layer

In this paper, 2D $\text{MoSe}_{2}$ is demonstrated as a promising active material for forming free flexible RRAM devices. Fabricated $\text{Ag}/\text{MoSe}_{2}/\text{ITO}$ flexible RRAM devices exhibited excellent resistive switching with very low SET/RESET voltages $\sim\pm 1$ V, high data retention $> 10^{4} \ \mathrm{s}$ , on/off current ratios of 10 ² to 10 ³ , and endurance for more than 100 cycles. These results indicate that $\text{MoSe}_{2}$ can be a suitable switching layer candidate for high-performance RRAM devices for flexible and large area electronics.