Mg-Te OTS selector with Low Ioff ( < 100 pA), Fast Switching Speed (τd = 7 ns), and High Thermal Stability (400 °C / 30min) for X-point Memory Applications

We report on nanoscale (d = 45 nm), binary Mg-Te based ovonic threshold switching (OTS) selector with low leakage current (I off = 88 pA), high threshold voltage (V th = 2.4V/10 nm), fast switching speed (τ d = 7 ns) and high thermal stability (400 °C/30 min). We found that OTS selector parameters (I off and V th ) are closely related to the activation energy (E a ) of the Poole-Frenkel conduction model which can be controlled by varying the composition ratio of Mg and Te. The best OTS device characteristics such as large E a (~ 0.7 eV), lowest I off and highest V th can be obtained by adopting the optimum composition of Mg 0.5 Te 0.5 .