28.7 A 1.1V 6.4Gb/s/pin 24-Gb DDR5 SDRAM with a Highly-Accurate Duty Corrector and NBTI-Tolerant DLL
2023 IEEE International Solid-State Circuits Conference (ISSCC)（2023）
关键词
current 28.7 A,DRAM,GIO separation switch,GIO switching,high-quality multimedia data increases,high-speed operations,higher operations,higher tolerance,highly-accurate duty corrector,low-pass filter,low-power consumption,low-power operation,NBTI-tolerant DLL,negative-bias thermal instability,process variation,process-voltage-temperature variations,read-only GIO pre-charge scheme,voltage 1.1 V
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