28.2 A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$
2023 IEEE International Solid-State Circuits Conference (ISSCC)（2023）
关键词
>300-layer,300 layersi,adaptive unselected string pre-charge technique,byte rate 194.0 MByte/s,continuous performance improvements,data storage increases,decreased stack pitch,dummy string technique,increasing WL resistance,NAND-Flash memory field,plane-level read retry technique,program performance,stacked layers decreases,tripleverify program technique,write throughput
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