32.4 A 1V-Supply $1.85\mathrm{V}_{\text{PP}}$ -Input-Range 1kHz-BW 181.9dB-FOMDR 179.4dB-FOMSNDR 2nd-Order Noise-Shaping SAR-ADC with Enhanced Input Impedance in 0.18μm CMOS
2023 IEEE International Solid-State Circuits Conference (ISSCC)(2023)
摘要
Wearable devices rely on accurately read bio-potentials such as ECG, EEG, EMG, and EOG (ExG) to track health. Specifications-wise, such a system requires an input-referred-noise (IRN)
$< 5\mu\mathrm{V}_{\text{rms}}$
, input impedance
$(\mathrm{Z}_{\text{IN}}) > 10\mathrm{M}\Omega$
and BW
$\sim$
1kHz to readout ExG signals accurately [1]. In addition, a linear-input-range (IR)
$> 1\mathrm{V}_{\text{pp}}$
is desirable to avoid saturation when motion/stimulation artifacts are present. Furthermore, the above has to be achieved energy-efficiently
$(\text{FOM}_{\text{SNDR}} > 175\text{dB})$
and at power envelopes
$< 10\mu\mathrm{W}$
to reduce battery recharge-cycles.
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关键词
2nd-order noise-shaping SAR-ADC,bandwidth 1.0 kHz,battery recharge-cycles,bio-potentials,CMOS,ECG,EEG,EMG,EOG,ExG signals,input impedance,input-referred-noise,linear-input-range,motion-stimulation artifacts,power envelopes,size 0.18 mum,voltage 1.0 V,voltage 1.85 V,wearable devices
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