Experimental Research on Power Cycling of High Power Thyristor Based on Electromigration Degradation Model

In the reliability evaluation of high-power semiconductor devices, the power cycle test is used to simulate the thermal fatigue failure of devices triggered by temperature fluctuation stress, and the test is conducted with the device failure or significant drift of electrical parameters as the cutoff condition. The coffin-Manson life model based on the number of cycles obtained is the basis for evaluating the device's reliability. In this paper, we obtain the changing pattern of material properties triggered by electromigration through simultaneous observation of device material electromigration during the power cycle test. By data analysis, we get the quantitative relationship between material degradation and device electrical parameters/number of power cycles. Using electromigration degradation as a supplement to device aging characterization, we adjust the prediction results of the coffin-Manson life model on the device reliability index.