Compact Model of Junctionless Nanowire Transistor for Air-Pollution Sensor

The paper presents a junctionless nanowire transistor (JLNT) compact model. The model is developed based on the compact model of J. P. Collinge and it is implemented in Matlab. The modeled JLNT is the core device of an air-pollution sensor for real-time detection of atmospheric radicals. The device configurations are modeled and compared versus experimental measurements of prototypes fabricated at the Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany). Modeled device structures were fabricated on ultra-thin SOI substrates using electron beam and UV lithography processes, reactive ion etching, rapid thermal oxidation, thermal evaporation, rapid thermal annealing. Electrical device characteristics are compared for two types of fabricated devices. The average integral error of our model compared to the measured characteristics is between 2.83% and 9.30% for both device types.