Towards Printed Conductive-Bridge Memory Devices Based on Mesoporous SiO2 Film

Conductive Bridge Random Access Memory (CBRAM) device has been considered as a good candidate for applications on flexible substrate. In this study, CBRAM memory cells were fabricated through a heterogeneous process combining vacuum-free, low cost and fast processing technique such as sol-gel for the $\text{SiO}_{2}$ mesoporous electrolyte and inkjet- printing for silver lines acting as active electrodes. We demonstrate the non-volatile behavior of the cells, that arises from the formation and dissolution of conductive Ag filaments within the mesopores of the $\text{SiO}_{2}$ thin film. The cells feature low switching voltages, a high ratio between high and low resistance states of $10^{4}$ , and reasonable bipolar switching behavior with more than $10^{3}$ write-read-erase-read cycles. This work constitutes a step toward the elaboration of crossbar memory arrays on flexible substrates with low cost and vacuum free techniques.