Demonstration of Ga2O3 trigate transistors on (100) silicon substrates

In this paper we demonstrated the UWBG Ga 2 O 3 trigate transistors heterogeneously integrated on silicon substrate. This trigate transistor operates in depletion mode having decent Ion/Ioff ratio (10 ⁵ ) and high transconductance (1 μS). Followed by the mobility is around 1.2 cm ² /V. s. This work suggests that the ultrawide bandgap oxide transistors can be fabricated on various heterogenous substrates to achieve highly integrated, low cost, and robust electronics.