Design of a Low-pass Filter Based on the Through-Silicon-Via Structure

The paper provides a novel low-pass filter by using the through-silicon-via (TSV) based 3D integration technology. It is designed based on a typical low-pass Butterworth filter, which consists of two inductors and one capacitor. In order to reduce the consumination of chip area, both the inductor and the capacitor are desinged based on the TSV techniques. Simulation results have validated that the proposed passband filter, working in the frequency range from DC to 3GHz, can provide good working performance.