Design of Dual-channel 3.3-4.2 GHz LNA with 11 Different Gain Modes in 90 nm SOI Technology

Based on 90 nm SOI technology, this paper demonstrates the design of a dual-channel n77 (3.3 GHz-4.2 GHz) low noise amplifier applied to 5G terminals. The LNA contains eight amplification modes and three attenuation modes, all of which are integrated on an LNA chip. The input matching of all modes is realized by an external inductor with a high Q. This paper focuses on the design method of ultra high gain LNA and matching network of different modes. For amplification mode of maximum gain, simulations show 24.47 dB of gain, 1.3 dB of NF, -8.53 dBm of input third-order intercept (IIP3) for the LNA, with 17.5 mW dc power consumption where 14.5 mA current is drawn from 1.2 V supply.