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A 0.5-2.6 GHz GaN Power Amplifier Based on Filter Synthesis and Multi-Frequency Impedance Matching

Qingbo Li, Hanwen Li,Falin Liu

2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT)(2023)

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Abstract
This paper presents a straightforward design approach based on the synthesis of low-pass filters and multi-frequency impedance matching to achieve a high-efficiency power amplifier (PA) with more than an octave bandwidth using a 10 W gallium nitride (GaN) device. Using a four-stage Chebyshev matching structure, a matching network from a fixed real impedance to a set of frequency-dependent complex impedances has been optimized and implemented. Both simulation and experimental results show that a broadband PA is realized from 0.5 to 2.6 GHz with a measured drain efficiency (DE) of 60%-68.4% at 38.9-42.3 dBm saturated output power. These results validate the feasibility of the design methodology and confirm the consistency between simulated and measured performance.
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Key words
broadband PA,design methodology,efficiency 60 percent to 68.4 percent,filter synthesis,fixed real impedance,four-stage Chebyshev matching structure,frequency 0.5 GHz to 2.6 GHz,frequency-dependent complex impedances,gallium nitride device,GaN/int,high-efficiency power amplifier,low-pass filter synthesis,matching network,measured drain efficiency,multifrequency impedance matching,octave bandwidth,power 10 W,saturated output power,straightforward design approach
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