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Improving FinFET Junctions and Contacts Via Laser Annealing

2023 21st International Workshop on Junction Technology (IWJT)(2023)

Cited 1|Views21
Key words
3D channel geometry,channel resistance,contact resistances,effective channel width,fin pitch,FinFET junctions,gate perimeter,gate width,laser annealing,metallic contact width,nanosecond laser,parasitic external resistance,performance limiting factor,planar FET,semiconductor industry transitions,three-dimensional transistors,transistor width,transistor-level specific contact resistivity
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