Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy

The combination of Si and 4H–SiC has potential applications in heterojunction diodes, bipolar-junction transistors, and optoelectronic devices. However, growing crystalline Si on 4H–SiC is challenging owing to a lattice mismatch of approximately 20% between Si and 4H–SiC. In this study, we discuss the growth of a Si epilayer by an Al-based nanostructure cluster grown on a 4H–SiC substrate using mixed-source hydride vapor phase epitaxy (HVPE). The results of the Raman spectra of the Al-based nanostructure cluster and hexagonal-shape Si and high-resolution X-ray diffraction patterns of the Si epilayer show that the hexagonal-shape Si epilayer exhibit a hexagonal 2H–Si structure belonging to the P 6 3 / mmc (D 4 6h ) space group. The mixed-source HVPE method enables the growth of crystalline Si on a 4H–SiC substrate despite the significant lattice mismatch between the 4H–SiC substrate and Si structures. Therefore, the potential application of the novel Si/SiC structure can be achieved using a mixed-source HVPE growth method.