Simulation of Planar Heterojunction CH3NH3PbI3 Solar Cell Employing SiGeSn Alloy as a Backplane

Present day perovskite solar cells aim is to achieve high photovoltaic efficiency with low fabrication cost. To achieve these objectives, SiGeSn group IV material has been employed as a backplane in the perovskite solar cells. In this work, we present the design of MgF2/FTO/SnO2/CH3NH3PbI3/SiGe/Spiro-OMeTAD/SiGeSn/Au solar cell structure. The main focus of the present work is on the group IV alloy (SiGeSn) as a backplane which enhances the back reflectivity, reduces the photon absorption rate and ensuring the high quantum efficiency. According to the results, the optimal PCE of the proposed perovskite solar cell has been obtained due to the proper selection of material for backplane such as SiGeSn which has a potential to reduce the photon absorption rate though promising the higher efficiency. The effect of thickness of perovskite layer and doping of different layers have been investigated against various performance parameters. Efficiency of more than 26