Investigation of monolayer MX2 as sub-nanometer copper diffusion barriers
2018 IEEE International Reliability Physics Symposium (IRPS)(2018)
摘要
We investigate four monolayer transition metal dichalcogenides (TMDs) - MoS
2
, WS
2
, MoSe
2
, and WSe
2
- transferred to silicon substrates as possible sub-nanometer copper diffusion barriers compatible with back-end-of-line temperatures. Based on top-down scanning electron microscope (SEM) and cross-section transmission electron microscope imaging, we demonstrate that the W-based TMDs act as diffusion barriers up to 360°C, while Mo-based TMDs fail at temperatures as low as 300°C. Analysis by SEM indicates that points of failure occur as pinholes, suggesting that mechanical damage may be the origin of failure. Further analysis by X-ray photoemission spectroscopy on as-grown TMDs reveals all four to be chemically unaffected by copper at temperatures as high as 600°C, indicating that directly-grown TMDs still have potential as sub-nanometer diffusion barriers.
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关键词
2D semiconductor,transition metal dichalcogenide,copper interconnects,diffusion barrier,failure analysis
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