Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id -Vd characteristics
2018 IEEE International Reliability Physics Symposium (IRPS)(2018)
Abstract
In this work, we present an experimental method to obtain the location of the pinch-off point in a MOSFET biased in saturation. The proposed methodology, applicable to nanoscale devices, enables lateral profiling of hot-carrier-induced defects directly from measured data without the need of extensive computer simulation or complicated analytical modeling.
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Key words
Defect distribution,FinFET,Hot carrier,ID-VD,Lateral profiling
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