Design and analysis of a source pocket dual material hetero dielectric double gate TFET for improved performance

A source pocket dual material hetero dielectric double gate (SPDMHDDG) TFET structure is proposed in this work to improve tunneling current. An InGaAs material is used as a pocket in the source region near channel region to enhance the tunneling current. It has been found from the simulation that the proposed work increases on current to 10 times compared with Dual Material Hetero Dielectric Double Gate (DMHDDG) TFET structure. Further, the pocket length (LP), width (LW), and doping (NP) are optimized for optimum performance. It has been seen that at LP= 4nm, LW=12nm, and NP=1×1019 /cm3, the structure has maximum performance with on current and Subthreshold swing of 3.96×10-4 A/µm and 6.7 mV/decade, respectively.