Methodology and More Accurate Electrothermal Model for Fast Simulation of Power HEMTs

Presented work introduces an advanced methodology for fast 3-D TCAD electrothermal simulation for analysis of power devices. The proposed methodology allows fast simulation of complex systems from individual semiconductor layers at a frontend up to package and cooling assemblies at a backend. More accurate electrothermal model of power high-electron mobility transistors (HEMTs) is proposed and validated. The influence of the metallization layer geometry on the electrothermal behavior of the multifinger power HEMT is studied.