Effects of Arsenic Doping on CdSexTe1-x/CdTe Solar cells

The objective of this study was to investigate the effects of Arsenic (As) doping in CdTe/CST solar cells. The absorber layer was deposited by Closed Space Sublimation (CSS) process under the presence of ambient He and O 2 . Both CdTe and CST were deposited with a substrate and source temperature of 580°C and 680°C respectively. Devices were investigated with various Se compositions, with only CST doped or both CdTe & CST doped with As. Devices with only CST doped exhibited improved open circuit Voltage (Voc) 810 mV and Fill Factor (FF) of 64.5% compared to tcompletely undoped and both CdTe/CST doped.