Second Generation BIGT Chip Advancing the StakPak Platform

In this paper, we present the new 5.2kV StakPakgeneration based on an improved BIGT2 chip. The chip is a reverse conducting or Bimode IGBT optimized for low conduction loss, providing 30% improvement in current handling capability. The BIGT2 is based on the rugged Enhanced Planar (EP) IGBT cell and pilot anode design of its predecessor. The paper describes the design modifications implemented to achieve increased capability in both IGBT (1st quadrant) and Diode (3rd quadrant) mode while maintaining the same StakPak platform footprint.