High Current Density Vertical Nanowire TFETs With I₆₀ > 1 μA/μm

We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of $1.2~\mu \text{A}/\mu \text{m}$ , paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at $\text{V}_{DS}$ = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of $205~\mu \text{S}/\mu \text{m}$ , the ON-current for the same device is $18.6~\mu \text{A}/\mu \text{m}$ at $\text{V}_{DS}$ = 300 mV for $\text{I}_{OFF}$ of 1 nA/ $\mu \text{m}$ .