Surface Defects Originated Photoresponse Study in Hbn-Res2 FETs
2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)(2023)
Abstract
Electrical and optical transport properties of materials can be significantly affected by the imperfections in the crystal lattice. For instance, dislocations, defects, or grain boundaries. This paper presents a study on the electrical and optoelectrical properties of hBN-ReS 2 flakes field-effect transistors (FETs). The transistors demonstrate n-type behavior with an impressive electron mobility of 2.41 cm2/Vs. Additionally, the research highlights their remarkable photosensitive properties, exhibiting a photo-responsivity (Rλ) of 5.5 A/W and an external quantum efficiency (EQE) of 1240% when subjected to broad light irradiation at a wavelength (λ) of 550 nm. Under dark condition, there is a definite threshold voltage shift by 9.2 V between the device under vacuum and ambient air environment which is due to charge transfer takes place to the surface defects. Under light irradiation, photo-generated carriers (hole) get traps in those surface and bulk defects, which shows high photocurrent with 51.1% increment of I ds when compared to under air environment. There results here represent a crucial route in designing high performance two-dimensional optoelectronics device applications.
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Key words
MoS2,Photocurrent,Surface Defects,Field-Effect Transistors
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