Interpretation of Hopping Transport Based on Pentacene Thin-Film Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES(2023)

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摘要
Organic thin-film transistors (OTFTs) with pentacene active layer were fabricated and analyzed. The electrical parameters were deduced, with the adjusted threshold voltage by modified Y-function method. The derivative field effect mobility was adopted to extract the mobility enhancement factor, which is consistent with the characteristic temperature deduced from density of states (DOS) calculation. The electrical properties of pentacene thin-film transistors were modeled based on variable range hopping (VRH) mechanism, and active layer morphologies were also provided to verify the transport mechanism.
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关键词
Organic thin film transistors,Logic gates,Threshold voltage,Pentacene,Silicon,Temperature,Substrates,Characteristic modeling,density of states (DOS),organic thin-film transistor (OTFT),variable range hopping (VRH) transport
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