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All-antiferromagnetic Electrically Controlled Memory on Silicon Featuring Large Tunneling Magnetoresistance

Jiacheng Shi,Victor Lopez-Dominguez,Sevdenur Arpaci,Vinod K. Sangwan,Farzad Mahfouzi,Jinwoong Kim, Jordan G. Athas, Mohammad Hamdi,Can Aygen,Charudatta Phatak,Mario Carpentieri, Jidong S. Jiang,Matthew A. Grayson,Nicholas Kioussis,Giovanni Finocchio,Mark C. Hersam,Pedram Khalili Amiri

arXiv (Cornell University)（2023）

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关键词
Antiferromagnetic Spintronics,Magnetic Tunnel Junctions,Metal-Insulator Transition
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