Random Telegraph Noise Simulation and the Impact on Noise Sensitive Design

M. L. Lu, C. M. Hung, M. L. Fan, Y. S. Huang, C. C. Li, M. S. Yuan,C. H. Chang, C. S. Chiang, K. W. Su, C. K. Lin

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD(2023)

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Abstract
Adopting SPICE simulation to access the impact from various noise sources of transistor such as flicker noise, thermal noise as well as shot noise on circuit performance has been a common way for circuit design. However, the implementation of Random Telegraph Noise (RTN) on existing design considerations is rarely addressed. In this paper, a practical model approach to simulate RTN through TSMC Model Interface (TMI) has been disclosed. The RTN simulation approaches are also demonstrated with a case that shows how to mitigate RTN for the noise sensitive circuit. Therefore, the RTN related simulations can be executed more correctly with the right expectation.
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Key words
TMI,RTN Model
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