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Microscopic defects on MBE grown LWIR Hg

P. S. Wijewarnasuriya,M. Zandian,D. B. Young,J. Waldrop,D. D. Edwall,W. V. McLevige, D. Lee, J. Arias,A. I. D'Souza

Journal of Electronic Materials（1999）

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Key words
HgCdTe,etch pits,infrared detectors,micro-void defects,molecular beam epitaxy (MBE),void defects,zero bias resistance
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