On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD(2023)

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摘要
We use a 2D electrothermal continuum model that includes ion transport via diffusion and thermodiffusion to study the switching process of a device showing unipolar switching. We examine the influence of thermodiffusion on this unipolar switching process. Our theoretical investigation indicates that the unipolar operation cannot be described based on diffusion and thermodiffusion, in contrast to the proposal in literature.
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关键词
unipolar resistive switching,memristive device,valence change mechanism,thermodiffusion
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