Epitaxial growth and characterization of Bi_1-xSb_x thin films on (0001) sapphire substrates
arxiv(2023)
摘要
We report the molecular beam epitaxy of Bi_1-xSb_x thin films (0 ≤ x ≤
1) on (0001) sapphire substrates using a thin (Bi,Sb)_2Te_3 buffer layer.
Characterization of the films using reflection high energy diffraction, x-ray
diffraction, atomic force microscopy, and scanning transmission electron
microscopy reveals epitaxial growth of films of reasonable structural quality.
This is further confirmed via x-ray diffraction pole figures that determine the
epitaxial registry between the thin film and substrate. We further investigate
the microscopic structure of thin films via Raman spectroscopy, demonstrating
how the vibrational modes vary as the composition changes and discussing the
implications for the crystal structure. We also characterize the samples using
electrical transport measurements.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要