HBM3 PPA Performance Evaluation by TSV Model with Micro-Bump and Hybrid Bonding

Li-Hsin Huang, Yu-Ying Cheng,Tzong-Lin Wu

2023 IEEE 32nd Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)（2023）

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摘要

In this paper, through-silicon via (TSV) circuit models for the third generation of high bandwidth memory (HBM3) are developed utilizing 3D IC stacking technology with micro-bump or hybrid bonding. A good agreement between the results of the equivalent model and the full-wave simulation would be seen. In addition, the power, performance, and area (PPA) metrics of both stacking techniques are analyzed and compared. In all aspects, the hybrid bonding technique is more effective.

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关键词

Signal integrity (SI),PPA,hybrid bonding,high bandwidth memory (HBM),through-silicon via (TSV)

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