Investigations into the structural, morphology and optoelectronics properties of the CdO:Cu films produced by spray pyrolysis

This study used spray pyrolysis to create CdO films that were undoped and doped with Cu at varied concentrations (0, 1, 2, 3, 4 and 5%). The materials' polycrystalline cubic nature is confirmed by XRD examination. Rietveld refinement was used to get the lattice constant. In terms of energy dispersive more about the chemical makeup of materials. The structure, morphological, optical, and electrical properties of the film were investigated using the (XRD), (SEM), UV-spectrophotometer, and Hall arrangement. The band optical gaps, Eg , of the CdO:Cu films were observed to decrease as the quantity of Cu doping opt increased. Also, effective Cu doping enhances the electrical characteristics of CdO, as shown by the film's 3 % resistivity. The carrier concentration is approximately 5x1020 of that 2.25x1020 of the undoped film, whereas the amount of Cu doping is approximately ten of that of the CdO film. To increase both optical and electrical properties in a variety of optoelectronic device applications, Cu-CdO films can be used as Transparent Conducting Oxide (TCO) materials.