Spectrometric Performance of 4H-SiC Detectors after Neutron Irradiation

In this work the radiation hardness of 4H-SiC detectors based on epitaxial layer were studied. In the experiment two thicknesses of the epitaxial layer 25 and 50 mu m were used. Structures with Ni/Au Schottky contact of 3 mm diameter were prepared in a high vacuum apparatus. At first the spectrometric performance was tested using alpha-particle Ra-226 radiation source. Detectors demonstrate high resolution alpha-particle spectroscopy. Following detectors were divided into three groups and each was irradiated with different fluencies of neutrons up to 3.4 x 10(15) cm(-2). We observed the charge collection efficiency decreasing with a neutron fluence increasing.